Nov 17th, 2016 publishUpdated   Sep 12th, 2021, 1:09 pm

It’s no secret that Samsung is one of the most highly respected companies in the mobile chipset game. They have their own foundries, they produce their own chipsets, and they introduce new innovations seemingly year-round.

So, of course, companies like Qualcomm have no shame in turning to them for new products. That’s exactly what happened with the newly-announced Snapdragon 835 chipset.


Qualcomm says the chip was built on Samsung’s 10nm FinFET process, a manufacturing technique that offers up to a 30% increase in area efficiency with a 27% improvement in performance or up to 40% less power consumption compared to the previous version. This means devices can get smaller, last longer, and work harder without using much power compared to, say, 14nm dies such as the ones used in the Snapdragon 820 (which was also achieved with Samsung’s help, FYI).

Beyond those numbers, Qualcomm also mentioned that the chipset will introduce Quick Charge 4.0 which is based on USB-C. As far as the first devices to have all these goods, Qualcomm wasn’t keen on sharing a rough timeline as they usually do, but we think it’s safe to say that we’ll be seeing it inside of some pretty big phones at some point next year.

[via Qualcomm]

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